tsm680p06 taiwan semiconductor document number: ds_p0000127 1 version: f15 p-channel power mosfet -60v, -18a, 68m ? features improved dv/dt capability fast switching 100% eas guaranteed pb-free plating rohs compliant halogen-free mold compound key performance parameters parameter value unit v ds -60 v r ds(on) (max) v gs = -10v 68 m ? v gs = -4.5v 110 q g 16.4 nc application motor drive power tools led lighting to - 220 ito - 220 to - 251 s (ipak sl ) to - 252 (dpak) notes: moisture sensitivity level: level 3. per j-std-020 absolute m aximum ratings (t c = 25c unless otherwise noted) parameter symbol ipak/dpak ito-220 to-220 unit drain-source voltage v ds -60 v gate-source voltage v gs 20 v continuous drain current (note 1) t c = 25c i d -18 a t c = 100c -11 pulsed drain current (note 2) i dm -72 a total power dissipation @ t c = 25c p dtot 20 17 42 w single pulsed avalanche energy (note 3) e as 12.8 mj single pulsed avalanche current (note 3) i as -16 a operating junction and storage temperature range t j , t stg - 55 to +150 c thermal performance parameter symbol ipak/dpak ito-220 to-220 unit junction to case thermal resistance r ? jc 6.1 7.5 3 c/w junction to ambient thermal resistance r ? ja 62 c/w notes: r ? ja is the sum of the junction-to-case and case-to-amb ient thermal resistances. the case thermal referenc e is defined at the solder mounting surface of the drain pins. r ? ja is guaranteed by design while r ? ca is determined by the users board design. r ? ja shown below for single device operation on fr-4 pcb in still air.
tsm680p06 taiwan semiconductor document number: ds_p0000127 2 version: f15 electrical specifications (t c = 25c unless otherwise noted) parameter conditions symbol min typ max unit static (note 4) drain-source breakdown voltage v gs = 0v, i d = -250a bv dss -60 -- -- v gate threshold voltage v ds = v gs , i d = -250a v gs(th) -1.2 -1.6 -2.2 v gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = -60v, v gs = 0v i dss -- -- -1 a v ds = -48v, t c = 125 c -- -- -10 drain-source on-state resistance v gs = -10v, i d = -6a r ds(on) -- 54 68 m ? v gs = -4.5v, i d = -3a -- 72 110 forward transconductance v ds = -10v, i d = -6a g fs -- 8.5 -- s dynamic (note 5) total gate charge v ds = -30v, i d = -6a, v gs = -10v q g -- 16.4 -- nc gate-source charge q gs -- 2.8 -- gate-drain charge q gd -- 3.6 -- input capacitance v ds = -30v, v gs = 0v, f = 1.0mhz c iss -- 870 -- pf output capacitance c oss -- 70 -- reverse transfer capacitance c rss -- 42 -- gate resistance f = 1mhz, open drain r g -- 16 -- ? switching (note 6) turn-on delay time v dd = -30v, r gen = 6 ? , i d = -1a t d(on) -- 8.3 -- ns turn-on rise time t r -- 29.6 -- turn-off delay time t d(off) -- 51.7 -- turn-off fall time t f -- 15.6 -- source-drain diode (note 3) forward on voltage i s = -1a, v gs = 0v v sd -- -- -1 v reverse recovery time i s =1a di f /dt = 100a/ s t rr -- 20 -- ns reverse recovery charge q rr -- 10 -- nc maximum continuous forward current integral reverse diode in the mosfet i s -- -- -13 a maximum pulse forward current i sm -- -- -52 a notes: 1. current limited by package 2. pulse width limited by the maximum junction tempe rature 3. l = 0.1mh, i as = -16a, v dd = -25v, r g = 25 ? , starting t j = 25 o c 4. pulse test: pw 300s, duty cycle 2% 5. for design aid only, not subject to production test ing. 6. switching time is essentially independent of oper ating temperature.
tsm680p06 taiwan semiconductor document number: ds_p0000127 3 version: f15 ordering information part no. package packing tsm680p06cz c0g to-220 50pcs / tube tsm680p06ci c0g ito-220 50pcs / tube tsm680p06ch c5g to-251s (ipak sl) 75pcs / tube tsm680p06cp rog to-252 (dpak) 2,500pcs / 13 reel note: 1. compliant to rohs directive 2011/65/eu and in acco rdance to weee 2002/96/ec 2. halogen-free according to iec 61249-2-21 definiti on
tsm680p06 taiwan semiconductor document number: ds_p0000127 4 version: f15 characteristics curves (t c = 25c unless otherwise noted) continuous drain current vs. tc normalized rds(on) vs. tj normalized vth vs. tj gate charge waveform normalized transient impedance (to-251s) maximum safe operation area (to-251s) -i d , continuous drain current (a) t c , case temperature (c) t j , junction temperature (c) normalized on resistance (m w ) normalized gate threshold voltage (v) t j , junction temperature (c) -v gs , gate to source voltage (v) qg, gate charge (nc) square wave pulse duration (s) normalized thermal response -i d , continuous drain current (a) -v ds , drain to source voltage (v)
tsm680p06 taiwan semiconductor document number: ds_p0000127 5 version: f15 characteristics curves (t c = 25c unless otherwise noted) normalized transient impedance (to-252) maximum safe operation area (to-252) normalized transient impedance (to-220) maximum safe operation area (to-220) normalized transient impedance (ito-220) maximum safe operation area (ito-220) square wave pulse duration (s) normalized thermal response -i d , continuous drain current (a) -v ds , drain to source voltage (v) square wave pulse duration (s) normalized thermal response (r jc ) -i d , continuous drain current (a) -v ds , drain to source voltage (v) square wave pulse duration (s) normalized thermal response (r jc ) -i d , continuous drain current (a) -v ds , drain to source voltage (v)
tsm680p06 taiwan semiconductor document number: ds_p0000127 6 version: f15 package outline dimensions (unit: millimeters) to-220 marking diagram g = halogen free y = year code ww = week code (01~52) f = factory code
tsm680p06 taiwan semiconductor document number: ds_p0000127 7 version: f15 package outline dimensions (unit: millimeters) ito-220 marking diagram g = halogen free y = year code ww = week code (01~52) f = factory code
tsm680p06 taiwan semiconductor document number: ds_p0000127 8 version: f15 package outline dimensions (unit: millimeters) to-251s marking diagram y = year code m = month code for halogen free product o = jan p =feb q =mar r =apr s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z)
tsm680p06 taiwan semiconductor document number: ds_p0000127 9 version: f15 package outline dimensions (unit: millimeters) to-252 suggested pad layout marking diagram y = year code m = month code for halogen free product o =jan p =feb q =mar r =apr s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z)
tsm680p06 taiwan semiconductor document number: ds_p0000127 10 version: f15 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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